Copyright Statement: This is an open access article licensed under a Creative Commons Attribution 4.0 International License, which permits unrestricted use, distribution, and reproduction in any medium, even commercially as long as the original work is properly cited.
Digital Object Identifier (DOI) : 10.14569/SpecialIssue.2013.030106
Article Published in International Journal of Advanced Computer Science and Applications(IJACSA), Special Issue on Selected Papers from International Conference & Workshop On Advance Computing 2013, 2013.
Abstract: Optoelectronic is one of the thrust areas for the recent research activity. One of the key components of the optoelectronic family is photo detector to be widely used in broadband communication, optical computing, optical transformer, optical control etc. Present paper includes the investigation. carried on the basis of the. Multiplication measurements on GaAs, InP, InGaAs, GaInP, p+-i-n+s with –region thicknesses, with investigation of applicability of the local ionization theory. A local ionization coefficient to be increasingly unrepresentative of the position dependent values in the device as is reduced below 1 um.
Sanjay. C. Patil and B.K.Mishra, “GaAs, InP, InGaAs, GaInP, p+-i-n+ Multiplication measurements for Modeling of Semiconductor as photo detectors” International Journal of Advanced Computer Science and Applications(IJACSA), Special Issue on Selected Papers from International Conference & Workshop On Advance Computing 2013, 2013. http://dx.doi.org/10.14569/SpecialIssue.2013.030106