FTL Algorithm using Warm Block Technique for QLC+SLC Hybrid NAND Flash Memory

When applying the existing flash translation layer technique to a mixed NAND flash storage device composed of Quad Level Cell and Single Level Cell, because the characteristics of a semiconductor chip are not taken into consideration, the data are stored indiscriminately, and thus the performance and stability are not guaranteed. Therefore, this study proposes a flash translation layer algorithm using the warm block technique in a NAND flash storage device that combines a large capacity Quad Level Cell and a high performance Single Level Cell. The warm block technique avoids overloading of the read/write/erase operations in the Quad Level Cell flash memory by efficiently placing hot data that are frequently updated on a long-living Single Level Cell. It was confirmed experimentally that the lifetime extension and performance of hybrid NAND flash memory are improved using the warm block technique.

@article{Kim2018,
  title     = {FTL Algorithm using Warm Block Technique for QLC+SLC Hybrid NAND Flash Memory},
  journal   = {International Journal of Advanced Computer Science and Applications},
  volume    = {9},
  number    = {12},
  year      = {2018},
  publisher = {The Science and Information Organization},
  author    = {Wanil Kim and Seok-Bin Seo and Jin-Young Kim and Se Jin Kwon},
  doi       = {10.14569/IJACSA.2018.091220},
  url       = {https://doi.org/10.14569/IJACSA.2018.091220}
}