Abstract: When applying the existing flash translation layer technique to a mixed NAND flash storage device composed of Quad Level Cell and Single Level Cell, because the characteristics of a semiconductor chip are not taken into consideration, the data are stored indiscriminately, and thus the performance and stability are not guaranteed. Therefore, this study proposes a flash translation layer algorithm using the warm block technique in a NAND flash storage device that combines a large capacity Quad Level Cell and a high performance Single Level Cell. The warm block technique avoids overloading of the read/write/erase operations in the Quad Level Cell flash memory by efficiently placing hot data that are frequently updated on a long-living Single Level Cell. It was confirmed experimentally that the lifetime extension and performance of hybrid NAND flash memory are improved using the warm block technique.

Wanil Kim, Seok-Bin Seo, Jin-Young Kim and Se Jin Kwon, “FTL Algorithm using Warm Block Technique for QLC+SLC Hybrid NAND Flash Memory” International Journal of Advanced Computer Science and Applications(IJACSA), 9(12), 2018. http://dx.doi.org/10.14569/IJACSA.2018.091220

@article{Kim2018,
title = {FTL Algorithm using Warm Block Technique for QLC+SLC Hybrid NAND Flash Memory},
journal = {International Journal of Advanced Computer Science and Applications},
doi = {10.14569/IJACSA.2018.091220},
url = {http://dx.doi.org/10.14569/IJACSA.2018.091220},
year = {2018},
publisher = {The Science and Information Organization},
volume = {9},
number = {12},
author = {Wanil Kim and Seok-Bin Seo and Jin-Young Kim and Se Jin Kwon}
}