A Conversion of Empirical MOS Transistor Model Extracted From 180 nm Technology To EKV3.0 Model Using MATLAB

In this paper, the EKV3.0 model used for RF analog designs was validated in all-inversion regions under bias conditions and geometrical effects. A conversion of empirical data of 180nm CMOS process to EKV model was proposed. A MATLAB developed algorithm for parameter extraction was set up to evaluate the basic EKV model parameters. Respecting the substrate, and as long as the source and drain voltages remain constant, the DC currents and gm/ID real transistors ratio can be reconstructed by means of the EKV model with acceptable accuracy even with short channel devices. The results verify that the model takes into account the second order effects such as DIBL and CLM. The sizing of the elementary amplifier was considered in the studied example. The sizing procedure based on gm/ID methodology was described considering a semi-empirical model and an EKV model. The two gave close results.

@article{AYED2016,
  title     = {A Conversion of Empirical MOS Transistor Model Extracted From 180 nm Technology To EKV3.0 Model Using MATLAB},
  journal   = {International Journal of Advanced Computer Science and Applications},
  volume    = {7},
  number    = {7},
  year      = {2016},
  publisher = {The Science and Information Organization},
  author    = {Amine AYED and Mongi LAHIANI and Hamadi GHARIANI},
  doi       = {10.14569/IJACSA.2016.070712},
  url       = {https://doi.org/10.14569/IJACSA.2016.070712}
}